MOCVD reactor for growth of III-nitride epitaxial layers

Unit: Faculty of Physics

Keywords: Epitaxial layers, growth, reactor, nitride semiconductors, GaN, AlN, InN, AlGaN, InGaN, InAlN, BGaN, MOCVD, MOVPE, high power electronics, optoelectronics

Responsible person: Dr. Arūnas Kadys, tel. +37060034126,

MOCVD reactor for growth of III-nitride epitaxial layers (GaN, AlN, InN, AlGaN, InGaN, InAlN, BGaN) and structures (SQWs, MWQ, superlattice, etc.) on sapphire, galium nitride, silicon and silicon carbide subsrates.

 Properties of grown layers:
- Unintentional doped GaN (uGaN), minimal electron concentration ne=1016 cm3, electron mobility µe=250 cm2/Vs, growth rate 0,1÷2,5 µm/h, layer thickness 2-20 µm.
- n-type GaN:Si, ne=1016÷1018 cm3, µe=150÷250 cm2/Vs, growth rate 1÷2,5 µm/h.
- p-type GaN:Mg, nh=1016÷1018 cm3, µh=5÷10 cm2/Vs, growth rate 0,1÷0,5 µm/h.
- InGaN – In concentration can be varied from 0-30% or 60-100%.
- InN, ne =1018÷1020 cm3, µe=600 cm2/Vs, growth rate 50÷100 nm/h.
- AlGaN – Al concentration 0-100% growth rate 0,05÷1 µm/h, thickness 1 nm - 1 µm.
- AlInN and BGaN under investigation.
- Multistructures (e.g. InGaN/GaN QWs).
Possible substrates – size -2", material – sapphire, silicon, silicon carbide, bulk GaN. Up to three substrate at time.

Application. Growth of III-nitride epitaxial layers (GaN, AlN, InN, AlGaN, InGaN, InAlN, BGaN) and structures (SQWs, MWQ, superlattice, etc) on sapphire, galium nitride, silicon and silicon carbide subsrates.